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A Product Line of
Diodes Incorporated
ZXGD3103N8
Electrical characteristics at T A = 25°C; V CC = 10V; R BIAS = 3.3k ? ; R REF = 4.3k ?
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input and supply characteristics
Operating current
I OP
V D ≤ -200m V
V D ≥ 0V
-
-
2.16
5.16
-
-
mA
Gate Driver
Turn-off Threshold
Voltage(**)
V T
V G = 1V, (*)
-16
-10
0
mV
GATE output voltage (**)
V G(off)
V D ≥ 0V, (*)
V D = -50mV, ( )
-
6.0
0.73
7.2
1
-
V G
V D = -100mV, ( )
V D ≤ -150mV, ( )
V D ≤ -200mV, ( )
8.8
9.2
9.3
9.2
9.4
9.5
-
-
-
V
Switching performance (“) for Q G (tot) = 82nC
Turn on Propagation delay
t d1
150
Turn off Propagation delay
t d2
Refer to switching waveforms
in Fig. 3
15
Gate rise time
t r
450
ns
Gate fall time
t f
Continuous Conduction Mode
Discontinuous Conduction
Mode
21
17
Notes:
(**) GATEH connected to GATEL
(*) R H = 100k ? , R L = O/C
( ) R L = 100k ? , R H = O/C
(“) refer to test circuit below
ZXGD3103N8
Document number: DS32255 Rev. 2 - 2
3 of 12
www.diodes.com
November 2011
? Diodes Incorporated
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